Capacitance - Voltage and Current-Voltage Behavior of Nano Thin PMMA Films Prepared by Spin Coating

Thin films of poly (methyl methacrylate) (PMMA) were prepared by spin coating the solution of PMMA on to p-Si substrate. FTIR spectrum was used to identify the above said films. C-V and I-V behavior of the MISM structures with Aluminum/PMMA/p-Si/Aluminum have been studied. The C-V behavior was studied for various frequencies (f) from 20 kHz to 1 MHz and for a bias voltage range of -20 V to +20 V. As grown films showed a flat band voltage (V_FB) shift towards the positive voltage whereas annealed films showed a decrease in V_FB shift and it moved towards the zero flat band voltage (V_FB ≍ 0) value. Low leakage current was observed in the I-V characteristics for the voltage range studied. The ideality factor (n) was found to be ≍ 7 for the as grown film. The absence of hysteresis in the I-V characteristics for the forward and reverse sweep direction eliminates the presence of deep traps in the PMMA thin films