Andijan Machine-Building Institutte, 56.Babur shox Street, Andijan, Uzbekistan, Email id: suhrob_asr89@mail.ru
Online published on 10 August, 2020.
Anisotype heterojunctions p-Cu2ZnSnS4/n-Si were fabricated by sulfurization of metalprecursors which were deposited on a poly-Si substrate. Current -voltage characteristics are discussed and the dominating mechanisms of current transfer are determined: at a direct bias tunnel recombination processes prevail with participation of defect states on interface of heterojunction, when voltage increases Newman-s tunnel mechanism dominates. The reverse current through the heterojunctions under investigationwas analyzed within the tunnel mechanism.
Heterojunction, Silicon, CZTS, Current-Voltage Characteristic, Current Transport
