*Master, Bukhara State University, Uzbekistan
**Associate Professor of Physics, Bukhara State University, Uzbekistan
Online published on 1 June, 2021.
This paper examines the preparation of a field-effect transistor and how the current is controlled by the gate voltage supplied by the source, which is determined by the value of the current resistance flowing through the channel in a bipolar circuit.
Transistor, Field-effect transistor, Integral optics, p-n junction, Epitaxial structure, Gate, Stock, Bipolar circuit
