*Doctor of Physical and Mathematical Sciences, Director of Research Institute of Semiconductor Physics and Microelectronics, Uzbekistan, Email id: sh-utamuradova@yandex.ru
**Doctor of Physical and Mathematical Sciences, Executive Director of the National Research University, " Moscow Power Engineering Institute " in Tashkent, Uzbekistan
***Candidate of Physical and Mathematical Sciences, Research Institute of semiconductor Physics and Microelectronics, Uzbekistan
****PhD Student, Research Institute of Semiconductor Physics and Microelectronics, Uzbekistan, Email id: dilmurod-1991@bk.ru
Online published on 8 November, 2021.
This paper describes the design of a semiconductor photographic ionization camera used for spatio-temporal diagnostics of thermal fields of objects in the infrared wavelength range up to 30 fm and beyfnd. The results f experimental studies f phftf detectors made of silicon doped with platinum and sulfur in a semiconductor photographic ionization camera gas-discharge cell are presented. It is shown that high sensitivity of the photographic process is provided due to a new photographic effect, which is associated with the phenomenon of photoelectric hysteresis.
Diagnostics, Thermal Field, Laser Radiation, Photographic Effect, Photoelectric Hysteresis
