(PhD),
The possibility of self-organization of micro-particles of impurity atoms of nickel in silicon at certain thermodynamic conditions is introduced in this paper. It was revealed that the concentration and distribution of micro-particles in the bulk of the sample is essentially uniform. Research of state of nickel atoms in the samples was carried out by infrared microscope at room temperature. The results of investigations showed that in samples doped at 1220°C no formation of clusters of Ni in the lattice of Si was documented and perhaps it is due to the limited resolution of the infrared microscope. The doped samples were subjected to additional lowtemperature annealing at T=600°C÷1200°C during t=1÷3 hours in air. Then, after removing about 50 microns from the surface, all samples were subjected to optical polishing for further infrared microscope investigation. It was found, that in the course of additional annealing the self-organization of micro-particles of impurity eventually occurs.
Nanoscale structures, self-organization, clusters, impurity atoms, Ni clusters, single crystalline silicon, contact, nanophotonics, doping duration
