Department Of Physics, Ignatius Ajuru University of Education, Rumuolumeni. Port Harcourt. Rivers State, Nigeria, Email id: clement.ogbonda@iaue.edu.ng
Online published on 27 April, 2020.
Czochralski method for single crystal growth of gallium arsenide were carried out, the heat and mass transfer including defect formation in the crystal were also discussed. A reflector was used for separation of the heating and cooling areas in the furnaceenabling the facliitation of crystal growth. The melt, flow to stabilize the temperature distribution in a crucible was controlled using transverse magnetic fields in a large-scale silicon Czochralski furnace. The setup allows for changesin important parameters of point defect formation to be made, such as vacancies and interstitials, by changing temperature and flow fields in the furnace.
Facilitation, Czochralski
