CdS is an important II-VI semiconductor with many optoelectronic application including solar cell, Photodiode, LED, Non linear optics heterogeneous photo catalysis. The prepared Holmium doped CdS nanoparticles Samples were characterized by XRD, FTIR and UV and SEM. The size of the particles increased as the annealing temperature was increased. The crystallite size varied from 13.4 nm to 16.7nm as the calcination temperature increased. Band gap of Ho doped CdS increases to 5.35 eV and remains constant at higher temperatures, due to the Burstein-Moss effect caused by the quantum confinement. While that of undoped CdS nanoparticle is 4.17eV. The UV-Vis Absorption spectra show a shift towards 485 nm which is considerably blue shifted relative to the absorption of bulk CdS indicating quantum size effect. The doped CdS displayed a redshift relative to the undoped CdS indicating The doped CdS is highly effective and can significantly enhance the photo catalytic degradation.
Semiconductor, Nanomaterial, Doping, optical properties
