Structural and electrical studies of znte thin film on glass substrate by vacuum evaporation technique

ZnTe thin films were grown on glass substrate by using vacuum evaporation technique. Hall effect measurement indicates that the ZnTe film was p-type. Dielectric studies such as dielectric constant and loss tangent (tan δ) as a function of frequency were performed for ZnTe films. Carrier concentration, mobility and dielectric constant have been calculated.