Bulletin of Pure & Applied Sciences- Physics
  • Year: 2012
  • Volume: 31d
  • Issue: 2

Study of double gate and ultrathin body mosfet

  • Author:
  • Subodh Kr. Choudhary1, Bijay Kumar Singh2, Kaushlendra Prasad Singh3, Gita Kumari4, J.P. Kushwaha5
  • Total Page Count: 5
  • Page Number: 201 to 205

1 Research Scholar, University Dept. of Physics, T.M.B. University, Bhagalpur, India.

2 H.O.D, University, Dept. of Physics, T.M.B.University, Bhagalpur, India.

3Dept. of Physics, T.N.B. College, Bhagalpur, India

4Dept. of Physics, T.M.B.University, Bhagalpur, India

5Dept. of Physics, J.P. College, Narayanpur, India

Abstract

In this article, we have discussed the impact of energy quantization on the direct tunneling gate leakage current using the double gate and ultrathin body MOSFET including the impact of threshold voltage control solutions.

Keywords

MOSFET, Leakage current, Threshold voltage, tunnel current