Transpot coefficient of silicon based quantum well and calculation of energy loss rate

We have studied the temperature dependent transport co-efficient of Silicon based quantum wells. In our study energy dissipation power by non equilibrium carriers, and phonon-drag thermo power were taken in out in n-type Silicon inversion layers. It was found that under the Bloch-Gruniesen regime of electron scattering obeyed simple power dependence on temperature. We found that for the change of the observed temperature dependence is the dielectric of the particular structure. The structure contains a conductive channel close to quantum well. This type of channel is due to gate electrode in inversion layer. The same situation is found in heavily doped region in modulation doped Silicon. It was observed that there is changes in screening of the electron-phonon interaction for phonons having wave length close to the distance between the quantum well and the channel. It was found that deformation potential has a complex form due to degeneracy of the hole at the top of the valance bond.