A first principle study of electronic and structural properties of Indium Arsenide(InAs)

The operating characteristics of electronic and opto-electronic devices depend not only on material engineering at a practical level, it also demands clear understanding of the properties of materials and the fundamental science behind these properties. Owing to their technological significance, it is important to know different properties of these semiconductor compounds. Theoretical investigations as well as experimental research is therefore of vital interest to all those working in this area of research. In the present paper we have studied the electronic properties of ZB InAs, a binary semiconductor. The calculations are performed using the FP-LAPW approach plus local orbitals within the framework of density functional theory (DFT)