Short Distance Channel Defect Intractions in Graphene Nanoribbon Field Effect Transistors

We have studied theoretically the channel defect interaction and for this we have used correlated nonradiative multiphonon theory in conjunction with the coulomb energy. We have presented the charge capture rate. To calculate the value of coulomb energy we have developed a quantum capacitive circuit considering the effect of the fringing electrical field distributed spatially in the dielectric. The calculated short distance charge capture rate for the channel subbands at room temperature revealed a significant correlation between the capture rate and singularity characteristics of the one dimensional density of states. Charge capture through the nonradiative multiphonon transition is responsible for the shortdistance interactions between the channel carriers and the interfacial dielectric defects that are typically located within a few nanometers of the dielectric channel interface.