Solid State Physics Laboratory, Delhi-110 054.
The paper reviews the applications of ion beam-based techniques such as ion implantation and ion beam milling, for HgCdTe detector fabrication. Fabrication of large-format arrays and two-color arrays necessitate the use of dry processes. Ion irradiation causes type conversion in HgCdTe. The type conversion is far beyond the damage sites because of Hg in-diffusion to interstitial sites. The dry processes combine high anisotropy, faster etch rates, and better dimensional control, than wet etch processes, but require the damaged region to be removed.
Infrared detectors, mercury-cadmium-telluride detectors, ion implantation, ion beam milling, detector fabrications, IR detectors, reactive ion itching, etching processes
