Some Features of Charge Carrier Transfer in Granular Semiconductors - Structure and Mechanism of the Phenomenon

The model of a structure and location granular semiconductor appropriate to its real structure is suggested and on its basis, the mechanism of charge transfer is developed. It is considered, show that the processes of charge transfer in granular semiconductors depend on the size, structure and location of the granules. If the granules are arranged in series, the charge transfer from the first granule to the second granule will occur through the two contacting regions. In this case, the increase in trapped charge on localized traps in the two contacting regions leads to an increase in the height of the potential barrier, and this simultaneously leads to an increase the specific resistance. If the granules are arranged parallel to each other, the contacting area, also forms parallel between the granules as in the first variant, local energy levels are formed in it. However, in this case, the charge carriers do not move from one granule to the other, they are trapped in traps that are parallel to the formed contacting regions, and move to Ei levels. Wherein, there is growth in the total conductivity of the traps (Y_ss). In this case, the total specific conductivity is determined with the summary specific conductivities (R1, R2).