Some Features of Charge Carrier Transfer in Granular Semiconductors - Experiment

In the present paper, in accordance with the structural model and location of granules developed earlier, the mechanisms of carrier charge transfer in granular semiconductors have been experimentally investigated. Two types of location of the granule are found in thermoelements based on granular silicon. It has been experimentally established that for the first type there is an increase the specific resistance, while for the second type, the specific resistance decreases with increasing temperature. To the first type the charge transfer from the first granule to the second will occur through the regions between the granular boundaries, and the second type the process of charge transfer occurs mainly along the regions between the granular boundaries that a formed when parallel to each other. In was found a full accordance mechanism of occurrence of carrier charge transfer in granular semiconductors have been and experiment.