Self heating effects in soi technology

For more than three decades, it has been searching for a way to enhance existing silicon technology to speed up the computer performance. The Silicon on Insulator (SOI) technology results in faster computer chips with low frequency noise that also require less power a key requirement for extending the battery life of small, hand-held devices that will be pervasive in the future. SOI is a major breakthrough because it advances chip manufacturing one to two years ahead of conventional bulk silicon. It provides a step-by step look at the developments leading up to the development of SOI technology. Increased demand for High Performance, Low Power and Low Area among microelectronic devices is continuously pushing the fabrication process to go beyond ultra deep sub-micron (UDSM) technologies such as 45nm, 32nm and so on. Currently, chips are being designed in 55nm, 45nm and 32nm process nodes. The performance and power goals for certain applications in these advanced nodes couldn't be achieved with conventional silicon bulk Complementary Metal oxide semiconductor (CMOS) process leading to an alternative, Silicon on Insulator SOI process. Silicon on Insulator fabrication process helps in achieving greater performance and offers less power consumption compared to the Bulk Process.