Transport Phenomena in Single Crystal Silicon Plates under Diffusing Manganese

The purpose of this research is to quantify the transport of manganese (Mn) in single crystal silicon [111]. The diffusion coefficient of Mn in Si is determined based upon the data from Secondary Ion Mass Spectroscopy (SIMS) analysis. The silicon samples in form of plates were processed for 1.5 hours at 1000°C; a layer of Mn powder (99.9% pure) was used as impurity forced by temperature and concentration gradients to be incorporated into the silicon crystal. The estimated value of the diffusion coefficient is 2.71×10⁻¹² cm² s⁻¹. The electric property of Si was measured at room temperature, before and after diffusion process. At room temperature the electric conductivity depends on the flux of current and on the magnitude of the electric field. Raman Spectroscopy analysis on the surface of the silicon samples, before and after the diffusion process, shows that the sp3 bonding on the plates was not altered.