International Journal of Engineering and Management Research (IJEMR)

Multi gate Si-based devices such as tri-gate or gate-allaround (GAA) nanowire (NW) Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) are promising candidates for aggressively scaled CMOS due to their excellent electrostatics control. However, the carrier velocity i.e. mobility of carriers in these devices is generally degraded due to quantum-mechanical confinement effects. In this paper, the mobility-degradation factor and the series resistance of cylindrical gate-all-around silicon nanowire field-effect transistor (SNWFET) is discussed using the same mobility degradation model as in the case of conventional MOSFET. The calculation is done by defining voltage as a function of the saturation drain current evaluated from devices with various dimensions. The calculated mobilitydegradation factor is an order of magnitude larger than those of other conventional MOSFET. This exhibit the more possibility of interfaces scattering in the strong inversion condition, while the gate of presented model turn off the electron channel. The calculated series resistance is mostly due to the crowding of the electron flow along the sidewall of the n+ contact.