Modeling of Strip Isolation for n⁺-p⁻-p⁺ Si Microstrip Sensors Using P-Stop Structure

Silicon sensors have been very useful for particle physics experiments and will play important role in future also. But Si sensors are used near the collision point in the colliders, hence, irradiated by very high fluence of particles. Very high fluence irradiation can cause both surface and bulk damages. For p-type Si bulk microstrip sensors with n+ strips, there is an additional problem of electron accumulation layer between the n⁺ strips on the ohmic side of the n⁺-n⁻-p⁺ configuration. P-stop technique has been found very useful for providing interstrip isolation. Here, we have performed a simulation based analysis of the p-stop isolation technique.