Resolution of Differentials Equations of Excess Minority Carriers and Excitons Transport in the Silicon Base

In this work, we proposed a solving method of differential equations transport governing excess minority carriers and excitons density in illuminated silicon base solar cell. To do this, we have transformed this equations system in a linear differential equation with one unknown (excess minority carriers density) that we applied the Laplace transform method. We obtain thus the Laplace transform expression of excess minority carriers density in the base. For applying a reverse Laplace transform on the latter, we obtain the expression of excess minority carriers density in function to base parameters but above in function to two new parameters such as the second and third derivate of excess electrons density at the junction. The expression of excess excitons density is deduced in easy way to the transport equation carriers.