Associate Professor, ECE, Vidya Jyothi Institute of Technology, Aziz Nagar, c.b.post
Online published on 19 April, 2016.
Digital Multipliers are among the most critical arithmetic functional units in many applications, such as the Fourier transform, discrete cosine transforms, and digital filtering. The throughput of these applications depends on multipliers, and if the multipliers are too slow, the performance of entire circuits will be reduced. Furthermore, negative bias temperature instability (NBTI) occurs when a pMOS transistor is under negative bias (Vgs = −Vdd). In this situation, the interaction between inversion layer holes and hydrogen-passivated Si atoms breaks the Si–H bond generated during the oxidation process, generating H or H2 molecules. When these molecules diffuse away, interface traps are left. The accumulated interface traps between silicon and the gate oxide interface result in increased threshold voltage (Vth), reducing the circuit switching speed.
When the biased voltage is removed, the reverse reaction occurs, reducing the NBTI effect. However, the reverse reaction does not eliminate all the interface traps generated during the stress phase, and Vth is increased in the long term. Hence, it is important to design a reliable high-performance multiplier. The corresponding effect on an nMOS transistor is positive bias temperature instability (PBTI), which occurs when an nMOS transistor is under positive bias. Compared with the NBTI effect, the PBTI effect is much smaller on oxide/polygate transistors, and therefore is usually ignored. However, for high-k/metal-gate nMOS transistors with significant charge trapping, the PBTI effect can no longer be ignored. In fact, it has been shown that the PBTI effect is more significant than the NBTI effect on 32-nm high-k/metal-gate process. Traditional circuits use critical path delay as the overall circuit clock cycle in order to perform correctly. However, the probability that the critical paths are activated is low. In most cases, the path delay is shorter than the critical path. For these noncritical paths, using the critical path delay as the overall cycle period will result in significant timing waste. Hence, the variable-latency design was proposed to reduce the timing waste of traditional circuits.
PBTI, NBTI, PMOS, NMOS, VLSI, SILICON, THE GATE OXIDE INTERFACE