International Journal of Engineering, Science and Mathematics
  • Year: 2017
  • Volume: 6
  • Issue: 6

Bond Hardness and Mechanical Properties of ANB8-N Semiconductors and their Alloys

  • Author:
  • Mritunjai Kr. Pathak1, Madhu Sudan Dutta2, Rakesh Kr. Ranjan3, Parmanand Mahto3
  • Total Page Count: 32
  • Page Number: 357 to 388

1University Dept. of Physics, Vinoba Bhave University, Hazaribag-825301 (Jharkhand), India

2University Dept. Of Physics, Veer Kunwar Singh University, Ara, Bihar-802312, India

3University Dept. of Physics, Vinoba Bhave University, Hazaribag-825301 (Jharkhand), India

Online published on 19 April, 2019.

Abstract

In this paper a linear relation H= (0.199–0.037λ1.9401) B-(7.754–1.706λ.746) where B is the bulk modulus and λ is a parameter which is the average difference of group numbers of the constituent atoms (in the periodic table) of the compounds is proposed for microhardness of ANB8-N (N = 2, 3, 4) semiconductors. This equation has been obtained through the linear relations proposed for microhardness and bulk modulus in terms of bond hardness. Estimated values of B for group-IV, IV-IV, II-VI and III-V semiconductors are in closer agreement with the experimental and reported values. Microhardness of Sn, SiC, GeC, SnC, SiGe, SiSn, GeSn, BSb and CdO has been reported for the first time.

Keywords

Semiconductors, structural properties, microhardness, bulk modulus