Directorate of Rapeseed Mustard Research, Sewar, Bharatpur-321 303, Rajasthan
*Corresponding author's e-mail: agrinanju@gmail.com
Online published on 10 December, 2014.
Inheritance of siliquae bearing pattern was studied in Indian mustard using F1, back cross (BC1, BC2) and F2 generations derived from a cross NIF-V (clustered siliquae type) and NRCHB 101 (dispersed siliquae type). Individual plants from segregating generations were grouped into two phenotypic classes viz. dispersed and clustered siliquae bearing pattern. The dispersed pattern was dominant over clustered siliquae bearing pattern. The estimated ratio of F2 plants fitted to an assumed phenotypic ratio of 15 dispersed: 1 clustered. A two gene model, each with two alleles and having duplicate gene action, is proposed to explain the inheritance of siliquae bearing pattern in Indian mustard. The information generated in this study will help in developing breeding strategy for utilizing this trait to redesign the mustard ideotype for high siliqua density.
Clustered siliquae, dispersed siliquae, duplicate gene action, siliquae density