Comparative analysis of Ultra MOSFET with Conventional MOSFET

UMOSFET is a power MOSFET. It is called UMOS because its gate region is in U shape, the specific on resistance of the UMOS is significantly smaller than its predecessor DMOSFET as the channel density can be increased can be made larger by using a smaller cell pitch. Unlike DMOSFET it does not have a JEFT region which further reduces the on resistance. A high voltage can be supported by the UMOS structure. The breakdown voltage of the UMOS is significantly larger than ordinary MOSFET. Larger N-drift region allows large amount of currents and also reduces the resistance as the area is increased significantly. The bulk which was a sizable portion of n-channel and p-channel MOSFET is quit thin is UMOS, whereas the drain which makes a small portion in MOSFET occupies a significantly large area and play a major role in the reduction of on resistance and withstanding the high value of voltages. Using UMOS is saving 40% free space than using NMOS technology. The electric field in the gate oxide is relatively large in the U-MOSFET structure. In addition, the reverse transfer capacitance for the power U-MOSFET structure is much greater than the NMOS. We are aiming to model a UMOS structure using silvaco and compare its characteristics with an NMOS modeled in silvaco.