New High Performance 8T SRAM Cell Using Finfet Technology

In the design of memory, the estimation of dynamic power, dynamic current, leakage current and power of leakage are very essential, especially for low power applications. In this paper, we propose a FinFET base 8T Static Random Access Memory (SRAM) cell. FinFETs also promise to improve the difficult performance report power of compromise. FinFET can be used to reduce the leakage current and power of leakage. The purpose of this paper is to reduce the leakage current, power and improve the power of FinFET based 8T SRAM cell. The present paper represents the simulation of 8T and the analysis of SRAM different parameters such as power dissipation, leakage current and power of leakage. By this paper the leakage current improve 4.35 nA to 2.83 nA and leakage power 16.60 nW to 11.35 nW. The WSNM is 530.30 and RSNM is 516.70Mv. In this paper we use Empyrean Aether tools at 22 nm technology.