Department of Physics, Faculty of Science Alexandria University, Alexandria, Egypt.
Hall coefficient (RH) measurements of moderately doped n-InSb system were carried out at low temperatures (T) down to 18 K. An exponential increase in RH was initially observed when T was reduced. This increase of RH is due to the expected reduction in the free carrier concentration. At low enough temperatures, RH tends to a constant value. This is explained as due to band tailing taking place in this system. On the other hand, Hall mobility (μH) was studied as a function of temperatures down to 18 K. μH is increased as T is reduced at the high and intermediate temperature regimes down to 50 K. This increase is followed by a decrease at low temperatures. The decrease of μH may be attributed to the ionized impurity scattering which is probably dominant at this range of temperatures.
