Physics Department, Faculty of Science, Sohag University, 82524, Sohag, Egypt
*Corresponding author: Girls College of Education, P.O. Box 3137, Unaizah, 51911, Qassim - Kingdom of Saudi Arabia. (S. A. Ahmed)
PACS: 71.18.+y, 71.20.−b, 71.55.−i, 72.15.−v, 72.20.−i
Current-voltage (I-V) measurements on polycrystalline samples of Bi2Se3 and stoichiometric ternary compound in the quasi-binary system SnSe-Bi2Se3 at different temperatures in the vicinity of room temperature have been performed. Also, temperature dependence of electrical conductivity has been measured. From the analysis of the temperature dependence of electron concentration in the activation regime above room temperature, the density of states effective mass m* has been determined. Some intrinsic and contact properties such as barrier heights, ideality factors and carriers concentrations have been investigated using I-V characteristics. It has been found that all samples exhibit ohmic and space charge limited conduction at low and high fields, respectively.
Semiconductors, Electrical conductivity, I-V characteristics, Density of states effective mass
