Department of Physics, Feroze Gandhi College, Raebareli – 229001.
The study of recombination mechanism and its control parameters in multicrystalline silicon solar cell is very essential to achieve high cell efficiency for photovoltaic application. Recombination Statistics of various impurity elements in crystalline silicon solar cell is strongly determined by recombination parameters, i.e. the bulk carrier recombination lifetime τb, and the effective surface recombination velocity (SRV) at the rear of the cell. Study was performed using Shockley-Read-Hall (SRH) recombination and modeling is done by the simulation software PC1D to calculate output parameters of PVC. We have obtained larger recombination lifetime of 22.6 ms for an impurity (vanadium) at injection level of 4.498 × 1015 cm−3 for base resistivity 1 Ωcm & surface recombination velocity 103 cm s−1 and hence efficiency of PVC increased to the value 19.06% with respect to the chosen base model.
Multicrystalline Silicon, SRH Recombination lifetime, Surface recombination velocity, Trap energy state, Capture cross section, Efficiency
