International Journal of Pure and Applied Physics
  • Year: 2009
  • Volume: 5
  • Issue: 3

Impurity Semiconductor as an Energy Radiator in Presence of Constant External Electric Field

  • Author:
  • Eldar Rasuloglu Hasanov1, Pasoul Nezhad Hosseyn2, Akber Zeynealabdinoglu Panahov3, Ali Ihsan Demirel3
  • Total Page Count: 4
  • Page Number: 239 to 242

1Baku State University, 23 Z. Khalilov str., AZ 1148, Baku city.

2Physical Institute of the Azerbaijan National Academy of Sciences, 33 H. Javid ave., AZ 1143, Baku city.

3Yuzuncu Yil University, Faculty of Sciences and Arts, 65080, Van, Turkey.

PACS no: 71.55.-, 72.20.Jv, 78.40.Fy

Abstract

It is shown that an impurity semiconductor in the presence of an external electric field can become an energy radiator with the certain frequency. Values of the frequency and external electric field, at which excited waves inside the semiconductor become instable, have been determined

Keywords

Impurity semiconductor, vibrational effects, instable waves, electron and hole capture, electron and hole mobilities