1School of Studies in Physics, Pt. Ravishankar Shukla University, Raipur(Chhatishgarh) 492010, India,
2Department of Applied Physics, Chhatrapati Shivaji Institute of Technology, Shivaji Nagar, Kolihapuri, Durg (Chhatishgarh) 491010, India.
3Department of Post-Graduate Studies and Research in Physics, Rani Durgavati University, Jabalpur 482001, India.
4Department of Applied Physics, Shri Shankracharya College of Engineering and Technology, Junwani, Bhilai 491020, India.
5Department of Physics, Government Model Science College, Jabalpur 482001, India.
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The present paper reports the transient behavior of mechanoluminescence of elemental and III-V semiconductors. When an elemental and III-V semiconductor is cleaved, initially the ML intensity increases with time, attains a peak value 1m at the time tm corresponding to completion of the cleavage and then it decreases exponentially with time, in which the decay time of ML depends on the type of signal emitted. Three types of signal are produced during the cleavage of elemental and III-V semiconductors. Type A signals arises due to the cleavage-induced population of the bulk conduction band and shallow traps and their subsequent de-excitation. Type B signal is produced due to the cleavage-induced population of the surfaces states and their subsequent de-excitation and type C signal occurs due to the cleavageinduced population of the defect centers and their subsequent de-excitation. The peak ML intensity 1m and the total ML intensity Ir increase directly with the area of the newly created surfaces of crystals. The wavelength of the light induced by cleavage of elemental and III-V semiconductors lies in the infrared region. Expressions are derived for different parameter of ML of elemental and III-V semiconductors, whereby a good correlation is found between the theoretical and experimental results.
