International Journal of Pure and Applied Physics
  • Year: 2010
  • Volume: 6
  • Issue: 1

Hetero-Junction Characteristics of p-Si and n-InBi1-xSbx/InBi1-xSex Thin Films

  • Author:
  • Dimple Shah1, S M Vyas2, M P Jani1, G R Pandya1
  • Total Page Count: 6
  • Page Number: 99 to 104

1Physics Department, Faculty of Science, The M. S. University of Baroda, vadodara-390002, India.

2Department of Physics, School of Sciences, Gujarat University, Ahmedabad-380009, India.

Abstract

The III-V intennetallic compounds are important for un-cooled long wavelength infrared (LWIR) photo detectors. The authors have prepared thin films of n-InBi1-xSbx and InBi1-xSex on p-Si wafer to prepare the heterojunctions under the vacuum of the order of 10-5 torr. The I-V (current and voltage) characteristics of these junctions have been studied. The results are reported and implications are discussed.