Department of Physics, College of Education, Addis Ababa University, P.O. Box 1176, Addis Ababa, Ethiopia.
In this communication the normalized Fermi-energy, the normalized hole drift mobility, the normalized Hall coefficient and the normalized coefficient of transverse magneto resistance are numerically calculated for different doping concentrations of acceptor impurities at a temperature T = 3000K in a heavily doped p-type silicon. The analysis of the results show that the formation of valence band tails and its effect on transport properties become significant for acceptor doping concentration ≥ 1019/cm3 and it is expected that results may be particularly of interesting above ≥ 1019/cm3. The result of this article might be very important in characterizing semiconductor devices.
