TMD Material a revolution for next generation transistors

Today's world is technologically emerging world. In which everything is technology oriented. In this changing environment every well equipped system need to be very efficient. In this new era of electronics industry there is need of devices which are having high speeds, enough band gap, high On/Off ratio and also high efficiency in-turn having less leakage current and occupancy. Up to some extent this can be achieved by using a new generation 2-D materials. In this paper we present an extensive study on TMD material Molybdenum Disulphide (MoS₂) which is a combination of Transition metal and di-Chalcogenide atoms (TMD). These are rigorously researched now a day due to their excellent semi conductor properties and also excellent temperature sensitivity. Not only in the area of semiconductor devices, these TMD's are also applicable in many areas like Optoelectronic devices, Gas sensing devices (GSD), Energy storage devices (ESD) etc.