Department of Physics, Maharaja Agrasen University, Solan, India
Online published on 30 December, 2015.
Annealing temperature plays a crucial role in the surface morphology and properties of Co doped SnO2. In this paper, we present a systematic investigation of the effect of annealing temperature on the electrical and dielectric properties of Co doped SnO2. Sn1-xCoxO2 samples have been chemically synthesized with low Co concentration (≤ 1%). The X-ray diffraction (XRD), and scanning electron microscopy (SEM), are used to characterize these samples. The XRD pattern shows the tetragonal rutile structure. The annealing temperature is found to play crucial role in tuning the structural, electrical and dielectric properties of the Co doped SnO2. The electrical behaviour of the prepared samples has been studied by measuring the I-V characteristics at different annealing temperature. The dielectric properties of these samples have been studied at frequency range of 1KHz-10 MHz for different annealing temperatures. The dielectric behaviour shows that the value of dielectric constant (ɛr) decreases rapidly in the lower frequency region, whereas it depicts a slight dispersion in the middle and higher frequency range. The ac conductivity shows a linear dependence with frequency
Co-doped SnO2, Diluted Magnetic Semiconductor, Sol-Gel method, Dielectric properties, ac conductivity