Structural and Electrical Properties of InSe Thin Films Deposited by Physical Evaporation Technique

InSe thin films were prepared onto precleaned glass substrate by physical evaporation technique at a pressure of 10⁻⁵ torr. The structural properties of thin films were evaluated by XRD, Transmission Electron Microscopy (TEM), Scanning Electron Microscope (SEM). The resistivity of the films isdetermined over the thickness range of 1100Å - 3000Å. The temperature dependence of resistivity shows semiconducting behavior. The thickness dependence of resistivity is found to follow Fuch-Sondheimer size effect theory. Activation energy is found to be 0.047 to 0.088 eV. Carrier concentration was found to be 0.9 x 10¹⁸ to 2.3 x 10¹⁸ cm⁻³. Hall coefficients and Hall mobility were also determined. The estimated values of Hall mobility and Hall coefficients are 4.759 X 10⁻⁴ to 0.413 X 10⁻⁴ cm²/V-sec. and 4.313 X 10⁻⁸ to 4.134 X 10⁻⁸ cm³/C respectively. Positive sign of the Hall coefficient shows P- type nature of films.