1Thin Film Photonic and Electronics Laboratory, Department of Material Science and Engineering, Chonnam National University, 300 Yongbong-dong, Puk-Gu, Gwangju 500–757, S. Korea
2Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur-416007(MS)
*E-mail: 1_chandrakant@yahoo.com
Online published on 10 August, 2015.
The low-cost SILAR method is used for the deposition of nanocrystalline ZnO thin ?lms. The XRD patterns shows as-deposited ZnO film is polycrystalline in nature with wurtzite crystal structure. Annealing at 673 K, results into improved crystallanity of the films. The morphological study reveals the well defined spherical nanograins with improved crystallite size after annealing. The electrical resistivity was decreased from 105 to 104 Ω-cm after annealing. Optical absorption studies showed lowabsorbance in visible region with band gap 3.2 eV which was decreased to 3.12 eV after annealing. The nanograined ZnO thin film are photoelectrochemically active and exhibits the 26 μA photocurrent, a 301 mV photovoltage and 0.30 fill factor (FF).
ZnO thin films; nanostructures, SILAR, electrical properties, optical properties
