Nano-technology Research Laboratory, Department of Electronics, Faculty of Applied Sciences, Wayamba University of Sri Lanka, Kuliyapitiya, Sri Lanka
*E-mail: nandanaf@phy.ruh.ac.lk
Online published on 10 August, 2015.
p-type Cu2O nano-surfaces were obtained by heating well cleaned Cu plates (98.9% purity) up to 500°C for 30 min by maintaining a slow heating rate (50C°/min) and allowed to cool to room temperature. Sample was characterized with XRD, AFM, FTIR and Diffuse reflectance measurements. Calculated band gap of p-Cu2O was found to be 1.99eV. Diffraction peaks correspond to (200), (220) and (311) planes of p-Cu2O were clearly observed. It was found that the photoelectrodes were highly stable at semiconductor electrolyte interface in the presence of (10−2 M) Fe2+/Fe3+ (10−4 M) redox couple, at zero dark current. Formation of CuO free p-Cu2O films were found with preparation method describe from this study.
p-Cu2O, photoelectrochemical cell, solar cell, p-Cu2O formation
