Electronic Transport in Se-doped a-Si:H Under Annealing

In the present work, the effect of annealing on dark and photoconductivity of Se-doped amorphous hydrogenated silicon films (a-Si:H) prepared by PECVD method have been investigated. The variation of the dark conductivity and photoconductivity as a function of temperature have been carried out on unannealed and annealed thin film samples at different annealing temperatures (T_a) from 100°C to 500°C. It was found that the values of both dark and photo conductivity vary with doping concentration as well as annealing temperature. The activation energy was calculated from dependence of dark conductivity measured after the samples were annealed at different temperatures. The variation of photoconductivity with annealing temperature for the Se-doped a-Si:H films was also investigated under optimised annealing temperature.