Effect of Patch Size on Current-Voltage Characteristics of Inhomogeneous Schottky Diodes with Discrete Distribution of Barrier Height Patches

The Poisson's equation and the drift diffusion equations have been used to simulate the current-voltage characteristics of inhomogeneous Schottky diodes with discrete distribution of barrier height patches of varying size. The potential variation inside the bulk semiconductor near the metal-semiconductor contact is calculated and then the current as a function of bias through the Schottky diode for various patch sizes are calculated. From the simulated current-voltage characteristics the diode parameters were extracted by fitting of current-voltage data into thermionic emission diffusion current equation. The derived barrier parameters are analyzed to study the effect of different barrier patch size on the current-voltage characteristics of inhomogeneities Schottky diodes.