1Department of Physics, Faculty of Science, M. S. University of Baroda, Vadodara- 390002, India
2Applied Physics Department, Faculty of technology and Engineering, The M. S. University of Baroda, Vadodara- 390001, India
*E-mail: miteshsarkar_msu@yahoo.com
Online published on 10 August, 2015.
The bilayer thin film of Sb-Se having different thickness of Selenium (Se) keeping constant thickness of Antimony (Sb) were prepared on Quartz substrate by Physical Vapour Deposition (PVD) technique. These films were characterized for structural, compositional, electrical and surface study by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray analysis (EDAX), atomic force microscopy (AFM) and resistivity respectively. These characterizations are compared for as-deposited, annealed and irradiated thin films. Irradiation was done with 200 MeV Ag15+ at a fluence of 5×1012 ions per cm2. Resistivity show metallic behavior of the films. XRD reveals increasing crystallite size after annealing and irradiation respectively in comparison to as grown films, where as the particle size decreased after irradiation. SEM micrograph of thin film shows uniform thickness distribution after annealing. AFM indicates that the relative smoothness of the irradiated films increased when compared to as grown films.
Thin films, XRD, Resistivity, EDAX, AFM
