Electrical properties of Pb_0.4In_0.6 Se Thin Films deposited by Physical Evaporation Technique

Thin films having different thickness of Pb_0.4In_0.6Se were deposited by thermal evaporation technique, onto precleaned amorphous glass substrate. The structural properties of films were evaluated by XRD, optical microscopy and Transmission Electron Microscopy (TEM). The electrical properties of annealed thin films have been evaluated. The resistivity of the films is determined over the thickness range of 1000 Å, 1500 Å, 2000 Å, 2500 Å and 3000 Å. The temperature dependence of resistivity shows semiconducting behavior. The thickness dependence of resistivity is found to follow Fuch-Sondheimer size effect theory. Activation energy is found to be 0.067 to 0.083eV. Estimated values of Carrier concentration was 4.149 x10²⁰ cm⁻³. Hall coefficients and Hall mobility were also determined. The estimated values of Hall mobility and Hall coefficients are 1.064 X 10⁻⁴ to 7.77 X 10⁻⁴ cm²/V-sec. and 6.202 X 10⁻⁸ to 1.7405 X 10⁻⁸ cm³/C respectively. Positive sign of the Hall coefficient shows P-type nature of films. The X-ray diffraction analysis confirms that films are polycrystalline having orthorhombic structure. The average grain size is found to be 6.342 nm.