Invertis Journal of Renewable Energy
  • Year: 2014
  • Volume: 4
  • Issue: 3

Study of Effective Band Gap in Semiconductor Nano-Solid

  • Author:
  • Bhoopendra Dhar Diwan1,, Alka Singh2, Manmohan Singh Kurrey2
  • Total Page Count: 4
  • Page Number: 132 to 135

1Department of Basic Sciences, Dr C.V. Raman University, Bilaspur-495001, India

2Department of Pure & Applied Physics, Guru Ghasidas Vishwavidyalaya, Bilaspur, India

*E-mail: bddiwan@gmail.com

Online published on 10 August, 2015.

Abstract

In this paper we have studied the size dependence effective band gap of semiconductor nano-solid. The band gap is one of the most significant electronic parameters of semiconductor material. The band gap of semiconductor dependents on the temperature, pressure, composition, number of atoms as well as size of the solid. When semiconductor solids are prepared in the form of nano-metric level, their small particle size gives rise to quantum confinement and the energy bands are split into discrete levels. It is found that the effective band gap decreases with increasing the size (number of atoms and diameter) of nano-solid. Another conclusion is that the energy band gap of semiconductor tend to decrease with increasing temperature and hence atomic vibration increases.

Keywords

Thin films, Size effect, Energy band gap, Semiconductor, effective mass, Nano-Solid