In this paper, an analytical model of ZnO TFT is proposed and the effect of grain size, and doping concentration, on the variation of effective carrier mobility and drain current with gate voltage is investigated. The model is based on the assumption that all the defect states are localized in grain boundaries (GBs). To validate the model, the computed results are compared with experimental data and yield a reasonable good agreement.
Grain boundaries, ZnO, TFT
