1Electrical Engineering Department, Sardar Vallabhbhai National Institute of Technology, Surat, Gujarat, India-395007
2Department of Applied Physics, Sardar Vallabhbhai National Institute of Technology, Surat, Gujarat, India-395007
Online published on 25 September, 2015.
A study on silicon multilayer structure having alternate hydrogenated nanocrystalline silicon layer and hydrogenated amorphous silicon, prepared by hot wire chemical vapour deposition is given. The structural characterization of film is done by raman spectroscopy. The peak at 516.3 cm−1 shows the characteristic crystalline peak together with broad amorphous peak at 481 cm−1. The optical band gap of thin film is 1.78 eV and thus shows that the film consist of mixed phase components.
Multilayer, Raman Spectroscopy, HWCVD, Optical bandgap
