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Progress in the area of RF communication has increased the for low cost, low power and more efficient low noise amplifiers In this paper we present the design of LNA which operates ta a frequency of 2Ghz. This LNA consists of printed circuit board, lumped elements and HiRel K-Band GaAs super low noise High Electron Mobility Transistor (HMET). This circuit is designed in Advanced Design System (ADS) and the analysis shows similar results for the theoretical values and for the simulated values.
Low noise amplifiers, RF, gain, noise figure