The Ru/Ti/n-InP Schottky barrier diode is fabricated and studied C-V characteristics as a function of temperature in the range between 120 K and 400 K. Schottky Barrier Height (SBH) and series resistance RS are found to be strong function of temperature. Due to the effect of series resistance RS these characteristics revealed nonlinear behaviour. And also, analyse the behaviour of the reverse leakage current. For this the Poole-Frenkel emission was found to be responsible in the temperature range of 120–320 K. The Schottky emission was the dominant mechanism at the temperature above 360 K. The results describe that, in the temperature range of 320K-360 K, the conversion of the conduction mechanism from Poole-Frenkel to Schottky emission.
Schottky Barrier Height, series resistance, Schottky and Poole-Frankel emission
