International Journal of Research in Social Sciences
  • Year: 2019
  • Volume: 9
  • Issue: 3

Design of low power alu using finfets

  • Author:
  • Susmita Mahan1, Raghvendra Singh2
  • Total Page Count: 8
  • Page Number: 540 to 547

1M. Tech. Scholar, EC Department Faculty of Engineering & Technology, Mandhana, Kanpur, Uttar Pradesh, India

2Assistant Professor in Department, electronic & communication engineering, Faculty of Engineering & Technology, Rama University, Kanpur, India

Online published on 10 September, 2019.

Abstract

We are moving towards the era of minimization of transistor size, short channel effects (SCE) are becoming major concern. Double gate FinFETs are emerging transistors, which gives better SCEs performance compared to conventional Mosfet transistors. Adder and sub-tractors are basic component in computation. Most of the operation multiplication, division, ripple carry addition etc. A 1-bit ALU has been designed using MOSFET and FinFET and simulated, which implements four basic operations like addition, subtraction, AND, OR. All the results are carried out using H-spice simulation tool. The simulation of ALU is carried at 32nm technology. The results obtained from simulation of FinFET ALU are compared with conventional MOS ALU. The figure of merit measured for ALU are power and delay.

Keywords

FinFET, CMOS, Short channel effects (SCEs), Circuit Design, Device simulation, ALU, H-spice