Monte Carlo Simulation study on electron beam interaction with resist and GaP semiconductor substrate

In this paper, Monte Carlo method is used to simulate and understand the electron beam interaction with resist and semiconductor substrates. This method can determine the path of the electrons in the solid which consists of single or multiple layers and also calculate the energy loss of the electrons in the resist and the substrate. We have used the Screened Rutherford model for electron scattering and the Bethe's continuous slowing down approximation for estimating the electron energy loss. Using our program written in C language, we have studied the electron interactions on GaP substrate with polymethyl Methylacrylate (PMMA) as resist and the depth of penetration for different electron energies.