1Assistant Professor, Department of Applied Science, Ram-Eesh Institute of Engineering & Technology, Greater Noida-201310, Uttar Pradesh, India
2Associate Professor, Department of Physics, Banasthali University, Banasthali-304022, Rajasthan
*Corresponding author email id: rashmiiyadav@gmail.com
PACS: 81.05.Ea, 42.82 Fv, 42.60.Lh, 73.Kp, 42.25.Ja, 73.21.Fg
This paper reports the behaviour of polarisation-dependent optical gain spectra in terms of lasing wavelength and photonic energy for In0.49 Ga0.51 As/InPSTIN Step index SQW single quantum well nano heterostructures within transverse electric (TE) and transverse magnetic (TM) modes. The optical gain within TE mode is found to be larger than that of TM mode, because most of the holes occupy the heavy holes energy sub-bands. In both the modes, the lasing wavelength corresponding to maximum optical gain is achieved at ~1, 330 nm, the maximum optical gain has been found at the photonic energy ~0.93 eV. Moreover, we have also studied the behaviour of peak optical gain along with carrier density for InGaAs/InP-based structures and it found to increase with increasing the carrier density. The nanostructure studied in this work is very useful as a light source for the optical-fibre-based communication system functioning in the NIR near infra red region due to less attenuation.
III-V semiconductors, Optical gain, Heterostructure polarisation, Quantum well
