International Journal of Scientific Engineering and Technology
  • Year: 2013
  • Volume: 2
  • Issue: 10

Comparative Analysis of Transimpedance Amplifier of 45 nm and 180nm CMOS Technology

  • Author:
  • Akshata Raut, Narendra Bhagat, S.S. Rathod
  • Total Page Count: 4
  • Page Number: 1022 to 1025

Sadar Patel Institute of Technology, Mumbai-400058, India

*raut_shilpa@rediffmail.com

**narendra_bhagat@spit.ac.in

***rathod_spce@yahoo.com

Online published on 4 November, 2017.

Abstract

This paper gives a comparative analysis of an inductorless Complementary Metal Oxide Semiconductor (CMOS) Single-ended current-mode Transimpedance Amplifier (TIA) intended for use in front-end Optical communication for wideband operation. This technique uses N similar TIAs in parallel configuration to boost the overall bandwidth as well as the transimpedance gain which is not possible with voltage-mode circuits. Using this method, we achieved the high bandwidth with high transimpedance gain, with the minimum power consumption of 64.5 and 1.6 mW for a 45 nm and 180 nm CMOS digital process respectively.

Keywords

Current-mode, inductorless, Transimpedance amplifier (TIA), Power Consumption, Bandwidth enhancement